61C65L-70P Ram
Philips Components Data sheet
Product specification date of issue | June 1990
FEATURES
* Operating supply voltage 5V+10%
* Inputs and outputs ESD protected
* Automatic power-down after a completed read access
* Access time: 55 ns and 70 ns
* Low current consumption:
active 70 mA max.
standby (TTL) 3 mA max.
standby (CMOS) 100 pA max.
(L-version)
standby (CMOS) 1 A max.
(LL-version)
* Suitable for battery back-up
operation: (FCB61C65L/LL only)
data retention voltage 2V min.
data retention current 50 uA max. (L-version)
1 pA max. (LL-version)
* Latched data outputs giving stable data between consecutive accesses
* Easy memory expansion
* Common data I/O interface
* Allinputs and outputs TTL and
CMOS compatible
* Allinputs have a Schmitt trigger switching action
* Three-state outputs
Operating temperature 0 °C to +70°C
data retention current
FCB61C65(L/LL)
8K x8 Fast CMOS low-power static
RAM
FOR DETAILED INFORMATION SEE RELEVANT
DATA BOOK OR DATA SHEET
GENERAL DESCRIPTION
The FCB61C65(L/LL) is a 65536-bit fast, low-power, static random access memory organized as 8192 words of 8 bits each.
The chip enable inputs CE1 and CE2 are available for memory expansion and to control the low-power / standby mode.
The device operates froma V power supply and has an access time of 55 ns and 70ns.
The FCB61C65({L/LL) is ideally suited for memory applications where fast access time, low power and ease of use are required.
The FCB61C65(L/LL) is a CMOS device which uses a 6 transistor memory cell.
The IC is fabricated ina CMOS double-metal single-poly process using ion-implanted silicon gate technology.
TYPE NUMBER /PINS| PIN POSITION |MATERIAL CODE
FCB61C65 (L/LL)-XXP 28 | DIL (600 mil) plastic SOT117
FCB61C65 (U/LL)-XXT 28 |SO28XL(330mil); plastic SOT213 43
